Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

Peter Darmawan, Takeo Minari, Akichika Kumatani, Yun Li, Chuan Liu, Kazuhito Tsukagoshi

研究成果: Article

36 引用 (Scopus)

抜粋

The enhancement of the charge injection process by the insertion of an ultrathin (∼1 nm) contact oxide interlayer (COI) at the metal/organic material interface in organic field effect transistors (OFETs) is reported. Six different oxides were used as COI, and Al 2O 3 was found to exhibit the highest OFET mobility with a reduction in the average contact resistance (R c) from 19.9 to 1.9 kΩ·cm. Photoelectron yield spectroscopy analysis revealed that the insertion of COI increases the work function of an Au contact and reduces the charge injection barrier at the interface, which lowers R c and, therefore, results in enhanced device performance.

元の言語English
記事番号013303
ジャーナルApplied Physics Letters
100
発行部数1
DOI
出版物ステータスPublished - 2012 1 2
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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