Reduction of base resistance and increase in cutoff frequency of Si bipolar transistor using rapid vapor-phase doping

Yukihiro Kiyota, Toshiyuki Kikuchi, Katsuyoshi Washio, Taroh Inada

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The shallow intrinsic base region of a double poly-Si self-aligned bipolar transistor was formed by rapid vapor-phase doping (RVD) in order to increase the high-frequency performance, compared to that provided by low-energy BF2 ion implantation. RVD produced a transistor with fT of 50-GHz and rb of 400-Ω. These parameters are 20% higher and 15% tower than those of a transistor produced by BF2 implantation. Low base resistance also led to an increase in the maximum oscillation frequency fmax to over 40 GHz in transistors with longer emitter. A two-dimensional profile simulation clarified that RVD can form a shallower intrinsic base profile and a deeper link base profile than those formed by BF2 ion implantation. These doping profiles made it possible to increase fT and fmax, and to reduce rb simultaneously.

本文言語English
ページ(範囲)1987-1991
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
4 B
出版ステータスPublished - 2000 12 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Reduction of base resistance and increase in cutoff frequency of Si bipolar transistor using rapid vapor-phase doping」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル