Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures

H. Iwata, H. Yokoyama, M. Sugimoto, N. Hamao, K. Onabe

研究成果: Article査読

23 被引用数 (Scopus)

抄録

The values of interfacial recombination velocities in GaAs/AlGaAs double heterostructures and quantum wells grown by molecular beam epitaxy with and without superlattice cladding layers are obtained with photoluminescence time-decay measurements. The authors show that superlattice layers reduce the interfacial recombination velocity from 330 cm/s, the value for double heterostructures with alloy cladding layers, to 40 cm/s, and that they have small effect on the GaAs bulk lifetime.

本文言語English
ページ(範囲)2427-2428
ページ数2
ジャーナルApplied Physics Letters
54
24
DOI
出版ステータスPublished - 1989 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル