Recrystallization of Si amorphized by Cu and Au ion implantation

K. Takahiro, T. Matsui, S. Nagata, S. Yamaguchi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The solid phase epitaxial growth (SPEG) of Si(100) preamorphized by Cu and Au ion implantation has been studied with various analytical tools such as Rutherford backscattering-channelling, X-ray diffraction and electron microscopy. The presence of implanted metallic atoms in a concentration above a critical value hinders the SPEG. It is found that the critical concentration depends on the composition as well as the structure of the amorphous (a-) Si layer at various annealing stages. High dose (greater than 4 × 1016 cm-2) implantation causes the precipitation of implanted impurities in the a-Si layer, which accelerates the random crystallization. We conclude therefore that the precipitation of the metallic solute controls the competition between SPEG and random crystallization in a-Si.

本文言語English
ページ(範囲)408-410
ページ数3
ジャーナルSurface and Coatings Technology
66
1-3
DOI
出版ステータスPublished - 1994 8月

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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