Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

Tomoaki Inokuchi, Takao Marukame, Tetsufumi Tanamoto, Hideyuki Sugiyama, Mizue Ishikawa, Yoshiaki Saito

研究成果: Conference contribution

13 被引用数 (Scopus)

抄録

Reconfigurability of a novel spintronics-based MOSFET; "Spin-transfer- Torque-Switching MOSFET (STS-MOSFET)" was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.

本文言語English
ホスト出版物のタイトル2010 Symposium on VLSI Technology, VLSIT 2010
ページ119-120
ページ数2
DOI
出版ステータスPublished - 2010 10月 19
外部発表はい
イベント2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
継続期間: 2010 6月 152010 6月 17

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷版)0743-1562

Other

Other2010 Symposium on VLSI Technology, VLSIT 2010
国/地域United States
CityHonolulu, HI
Period10/6/1510/6/17

ASJC Scopus subject areas

  • 電子工学および電気工学

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