Recombination-enhanced dislocation motion in SiGe and Ge

I. Yonenaga, M. Werner, M. Bartsch, U. Messerschmidt, E. R. Weber

研究成果: Article査読

20 被引用数 (Scopus)

抄録

In-situ straining experiments on dislocation motion in Ge and Si-5 at% Ge alloy single crystals are performed in a high voltage transmission electron microscope. In comparison with previous results by other methods, the dislocation velocities are found to be enhanced due to a recombination enhancement owing to the excess carrier injection by the electron beam. The reduction in the activation energy of dislocation motion is ascribed to the recombination-assisted kink formation. The kink migration energy is estimated to be 0.7 eV in Ge and 1.5 eV in SiGe.

本文言語English
ページ(範囲)35-40
ページ数6
ジャーナルPhysica Status Solidi (A) Applied Research
171
1
DOI
出版ステータスPublished - 1999 1月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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