Recent progresses in STT-MRAM and SOT-MRAM for next generation MRAM

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

In last decade, since high performance MTJ using CoFeB/MgO-based interfacial perpendicular magnetic anisotropy (IPMA) is utilized, STT-MRAM technology has rapidly progressed and mass-production of STT-MRAM has already started in the semiconductor companies. However, for further expansion of MRAM applications and markets, higher reliability, larger capacity or speed are required. In this invited paper, we describe our recent progresses in STT-/SOT-MRAM fabricated under developed 300mm integration process (PVD, RIE etc.) [4] with advanced spintronics device technologies, such as quad-interface MTJ [10] and canted SOT device [12].

本文言語English
ホスト出版物のタイトル2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728164601
DOI
出版ステータスPublished - 2020 6
イベント2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States
継続期間: 2020 6 162020 6 19

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
2020-June
ISSN(印刷版)0743-1562

Conference

Conference2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
国/地域United States
CityHonolulu
Period20/6/1620/6/19

ASJC Scopus subject areas

  • 電子工学および電気工学

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