Realization of one-chip-two-wavelength light sources

J. S. Song, M. W. Cho, D. C. Oh, H. Makino, T. Hanada, B. P. Zhang, Y. Segawa, H. S. Song, I. S. Cho, J. H. Chang, T. Yao

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We proposed a vertically integrated one-chip-two-wavelength light source which consists of a separate confinement single-quantum-well (SCH-SQW) ZnCdSe/ZnSe/ZnMgBeSe heterostructure for blue-green light emitters grown on SCH-MQW InGaP/InGaAlP for red light-emitting devices. We investigated, firstly, the effect of a thin low-temperature-grown ZnSe buffer layers (LT-ZnSe) in improving ZnSe crystallinity by inserting it between the high-temperature-grown ZnSe epilayer and the GaAs substrate, secondly, the growth optimization of LT-ZnSe on tilted GaAs (001) substrate, and lastly, the molecular beam epitaxy growth and characterization of ZnCdSe/ZnSe/ZnMgBeSe quantum well structures on metal organic chemical vapor deposition (MOCVD) grown III-V red light emitters. Optically pumped lasing is achieved from II-VI and III-V laser structures on one chip at room temperature. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures.

本文言語English
ページ(範囲)561-565
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
6
5-6
DOI
出版ステータスPublished - 2003 10

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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