The initial oxidation on a Si(110)-16 × 2 surface at room temperature and 540°C has been investigated by real-time X-ray photoemission spectroscopy (O 1s) using 687eV photons. At both temperatures, the initial oxidation of Si(110) is characterized by its unique rapid oxidation regime immediately after the introduction of oxygen molecules. O 1s spectra are shown to consist of at least four oxidation states. It is likely that oxidation at or around the adatoms of pentagon pairs, reportedly present on the Si(110)-16 × 2 reconstructed surface, is the predominant process in the very early stage of oxidation.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2007 4 24|
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