Real-time observation of initial thermal oxidation on Si(110)-16 × 2 surfaces by O 1s photoemission spectroscopy using synchrotron radiation

Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Yuzuru Narita, Yoshiharu Enta

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The initial oxidation on a Si(110)-16 × 2 surface at room temperature and 540°C has been investigated by real-time X-ray photoemission spectroscopy (O 1s) using 687eV photons. At both temperatures, the initial oxidation of Si(110) is characterized by its unique rapid oxidation regime immediately after the introduction of oxygen molecules. O 1s spectra are shown to consist of at least four oxidation states. It is likely that oxidation at or around the adatoms of pentagon pairs, reportedly present on the Si(110)-16 × 2 reconstructed surface, is the predominant process in the very early stage of oxidation.

本文言語English
ページ(範囲)1888-1890
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
4 B
DOI
出版ステータスPublished - 2007 4 24

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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