Real-time observation of high temperature interface between SiC substrate and solution during dissolution of SiC

Sakiko Kawanishi, Takeshi Yoshikawa, Kazuki Morita

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the "wide" bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2012, ECSCRM 2012
編集者Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov, Mikhail E. Levinshtein
出版社Trans Tech Publications Ltd
ページ35-38
ページ数4
ISBN(印刷版)9783037856246
DOI
出版ステータスPublished - 2013
外部発表はい
イベント9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
継続期間: 2012 9 22012 9 6

出版物シリーズ

名前Materials Science Forum
740-742
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
国/地域Russian Federation
CitySt. Petersburg
Period12/9/212/9/6

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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