Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

Ryoji Kosugi, Yuji Takakuwa, Ki Seon Kim, Tadashi Abukawa, Shozo Kono

研究成果: Article査読

16 被引用数 (Scopus)

抄録

The carbonization process of a preferential-domain Si(001)2×1 surface with ethylene was investigated by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy. It is found that the carbonization process during the so-called incubation time is the Si1-xCx alloy formation before the nucleation of 3C-SiC grains. A reaction model for the Si1-xCx alloy formation and for the 3C-SiC grain growth is proposed for substrate temperatures of 600-750°C. From the model, we postulate that the external supply of Si and C should be started just at the completion of the lateral 3C-SiC grain growth at temperatures of 600-650°C in order to obtain thick 3C-SiC layers with a flat surface morphology.

本文言語English
ページ(範囲)3939-3941
ページ数3
ジャーナルApplied Physics Letters
74
26
DOI
出版ステータスPublished - 1999 6月 28

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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