Real-time monitoring of charge accumulation during pulse-time-modulated plasma

Hiroto Ohtake, Butsurin Jinnai, Yuya Suzuki, Shinnosuke Soda, Tadashi Shimmura, Seiji Samukawa

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The authors investigated real-time monitoring of charge accumulation during pulse-time-modulated plasma processes by using their developed on-wafer monitoring chip. The charge accumulation potential between the top surface and the bottom in a Si O2 contact structure was measured during pulse-time-modulated plasma exposure with an on-wafer monitoring device. In conventional plasma with rf bias, the electron shading effect could be clearly observed as the potential difference between the wafer surface and the contact-hole bottom. Conversely, the accumulated charge in the pulse-time-modulated operation was drastically decreased. Time-resolved electron and ion flows to the Si O2 contact hole were clarified by the on-wafer monitoring. Accordingly, it was confirmed that the on-wafer monitoring is a very effective tool for investigating the local charge accumulation in actual device structures.

本文言語English
論文番号035606JVA
ページ(範囲)2172-2175
ページ数4
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
24
6
DOI
出版ステータスPublished - 2006

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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