抄録
The authors investigated real-time monitoring of charge accumulation during pulse-time-modulated plasma processes by using their developed on-wafer monitoring chip. The charge accumulation potential between the top surface and the bottom in a Si O2 contact structure was measured during pulse-time-modulated plasma exposure with an on-wafer monitoring device. In conventional plasma with rf bias, the electron shading effect could be clearly observed as the potential difference between the wafer surface and the contact-hole bottom. Conversely, the accumulated charge in the pulse-time-modulated operation was drastically decreased. Time-resolved electron and ion flows to the Si O2 contact hole were clarified by the on-wafer monitoring. Accordingly, it was confirmed that the on-wafer monitoring is a very effective tool for investigating the local charge accumulation in actual device structures.
本文言語 | English |
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論文番号 | 035606JVA |
ページ(範囲) | 2172-2175 |
ページ数 | 4 |
ジャーナル | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
巻 | 24 |
号 | 6 |
DOI | |
出版ステータス | Published - 2006 |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面および界面
- 表面、皮膜および薄膜