Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch2 and a bit error rate as low as 1.8 10-2.
|号||1 PART 1|
|出版ステータス||Published - 2006 12 1|
|イベント||International Symposium on Micro- and Nano-Scale Domain Structuring in Ferroelectrics, ISDS'05 - Ekaterinburg, Russian Federation|
継続期間: 2005 11 15 → 2005 11 19
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