Real information storage using ferroelectrics with a density of 1 TBIT/INCH2

K. Tanaka, Yoshiomi Hiranaga, Yasuo Cho

研究成果: Conference article査読

3 被引用数 (Scopus)

抄録

Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch2 and a bit error rate as low as 1.8 10-2.

本文言語English
ページ(範囲)99-105
ページ数7
ジャーナルFerroelectrics
340
1 PART 1
DOI
出版ステータスPublished - 2006 12 1
イベントInternational Symposium on Micro- and Nano-Scale Domain Structuring in Ferroelectrics, ISDS'05 - Ekaterinburg, Russian Federation
継続期間: 2005 11 152005 11 19

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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