Real information recording in ferroelectric data storage medium with memory density of 1 Tbit/inch2

K. Tanaka, Y. Hiranaga, Y. Cho

研究成果: Conference contribution

抄録

In this study, a new method to achieve real information recording with a density of 1 Tbit/inch2 in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction of nano domains, Local domain switching was carried out by applying a voltage pulse. A series of test writes revealed that the bit size varied according to the polarization direction of the bits in the immediate environment. Therefore, in order to keep the bit size constant (at 25.6 nm), the pulse amplitude required to create each individual bit was calculated as a function of the polarities of the surrounding data bits. As a result, real information storage at a density of 1 Tbit/inch2 was successfully achieved, with a low bit error rate of 1.8 × 10-2.

本文言語English
ホスト出版物のタイトルFerroelectric Thin Films XIII
ページ239-244
ページ数6
出版ステータスPublished - 2005 12 1
イベント2005 MRS Fall Meeting - Boston, MA, United States
継続期間: 2005 11 282005 12 2

出版物シリーズ

名前Materials Research Society Symposium Proceedings
902
ISSN(印刷版)0272-9172

Other

Other2005 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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