Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Takao Marukame, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito

研究成果: Conference contribution

12 被引用数 (Scopus)

抄録

For future high-performance reconfigurable logic devices, we developed a novel spin-based MOSFET; "Spin-Transfer-Torque-Switching MOSFET (STS-MOSFET)" that enables the read/write performance and memorization of the configuration with nonvolatility by using the ferromagnetic electrodes and the spin-polarized current through Si channel and spin-transfer torque switching in magnetic tunnel junctions (MTJs) on the source/drain. The read/write operation of the STS-MOSFET was first demonstrated in this work. The highly spin-polarized ferromagnet/MgO tunnel barrier electrodes and the MTJs using their structure for the source/drain showed great possibility to realize our proposed STS-MOSFET and to enhance their performance.

本文言語English
ホスト出版物のタイトル2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
ページ9.2.1-9.2.4
DOI
出版ステータスPublished - 2009 12月 1
外部発表はい
イベント2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
継続期間: 2009 12月 72009 12月 9

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
国/地域United States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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