Reactive force-field molecular dynamics study of sige thin film growth in plasma enhanced chemical vapor deposition processes

N. Uene, T. Mabuchi, M. Zaitsu, S. Yasuhara, T. Tokumasu

研究成果: Conference contribution

抄録

The SiGe thin films, such as hydrogenated amorphous SiGe (a-SiGe:H) and hydrogenated microcrystalline SiGe (μc-SiGe:H), are known as a potential material. In order to form promising SiGe thin films using chemical vapor deposition, relationship between materials/process and structure/composition should be clarified at the atomic level. We analyzed the influence of the substrate temperature and the ratio of SiH3 and GeH3, which are considered to be the dominant gaseous species on the deposition, on the crystallinity and atomic content in SiGe thin films by reactive force-field molecular dynamics simulations. The crystallinity increased as the substrate temperature increased, and the lowest crystallinity was obtained when the ratio of SiH3 and GeH3 is approximately 0.5. The hydrogen content decreased as the substrate temperature increased, while silicon and germanium content tended to increase as substrate temperature increased. These results were in good agreement with relevant studies.

本文言語English
ホスト出版物のタイトルPRiME 2020
ホスト出版物のサブタイトルSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
編集者Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
出版社IOP Publishing Ltd.
ページ177-184
ページ数8
5
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2020
イベントPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
継続期間: 2020 10 42020 10 9

出版物シリーズ

名前ECS Transactions
番号5
98
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Conference

ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
CountryUnited States
CityHonolulu
Period20/10/420/10/9

ASJC Scopus subject areas

  • Engineering(all)

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