Reaction path for formation of Cu2SnSe3 film by selenization of Cu-Sn precursor

Zeguo Tang, Kenta Aoyagi, Yuki Nukui, Kiichi Kosaka, Hikaru Uegaki, Jakapan Chatana, Daisuke Hironiwa, Takashi Minemoto

研究成果: Article査読

14 被引用数 (Scopus)


Reaction path for fabrication of Cu2SnSe3 (CTSe) film by selenization of Cu-Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well as glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM)-energy dispersive spectrometry (EDS) and transmission electron microscope (TEM) analyses revealed the element and phase distribution along the depth direction. Based on these results, a proposed growth model was concluded below: first, the Se atoms from evaporation source reacted with Cu and Sn atoms to produce Cu2-xSe and SnSe2 phases. Noticeably, resulting film presented bilayer feature with Cu2-xSe located at the surface and SnSe2 located at bottom. Second, CTSe phase formed at the interface of Cu2-xSe and SnSe2 as the increasing temperature. The Cu2-xSe was depleted by Sn-related secondary phases when the Cu/Sn ratio was smaller than 1.72. The secondary phases of SnSe2 and SnSe were coexisted with CTSe phase independent of Cu/Sn ratio in metallic precursor, which was attributed to the weak diffusion ability of Sn and Sn-related secondary phases in the CTSe film. The origins for high carrier concentration in CTSe films were ascribed to the Cu2-xSe and intrinsic acceptor concentration and effective approach to reduce the value was explored. An attempt of solar cell with CTSe as absorber was performed and photocurrent of 9.9 mA/cm2 was detected.

ジャーナルSolar Energy Materials and Solar Cells
出版ステータスPublished - 2015 7 31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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