TY - GEN
T1 - Reaction of Sn to nanocrystalline surface layer of Cu by near surface severe plastic deformation
AU - Minamino, Y.
AU - Koizumi, Y.
AU - Tsuji, N.
AU - Nakamizo, Y.
AU - Shibayanagi, T.
AU - Naka, M.
N1 - Publisher Copyright:
© (2007) Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - The near surface ultrafine grains (NSUFG) layer with grain sizes of about 35nm to 200nm from surface to about 10μm was prepared in the OFHC-Cu sheet with coarse grains size of about 7.2μ m (CG-Cu) by Near Surface Sever Plastic Deformation method. The solid reactions of Sn to NSUFG layer and CG-Cu were basically investigated at 379K to 493K for 1x103 to 6x106s. The Cu6Sn5 (η) and Cu3Sn (ε) layers were formed between Cu and Sn. The thickness of the ε layer in NSUFG-Cu/Sn was similar to that in CG-Cu/Sn one, while the thickness of the η layer in NSUFG-Cu/Sn reaction was about two times thicker than that in CG-Cu/Sn one. This enhancement of the η layer growth in NSUFG-Cu/Sn reaction was due to the large supply of Cu atoms to the reaction layer by the grain boundary diffusion in the NSUFG-Cu. The rate-controlling processes of layer growth were boundary diffusion mechanism in reaction layer at lower temperatures in shorter annealing time, and volume diffusion mechanism at higher temperatures in longer annealing times.
AB - The near surface ultrafine grains (NSUFG) layer with grain sizes of about 35nm to 200nm from surface to about 10μm was prepared in the OFHC-Cu sheet with coarse grains size of about 7.2μ m (CG-Cu) by Near Surface Sever Plastic Deformation method. The solid reactions of Sn to NSUFG layer and CG-Cu were basically investigated at 379K to 493K for 1x103 to 6x106s. The Cu6Sn5 (η) and Cu3Sn (ε) layers were formed between Cu and Sn. The thickness of the ε layer in NSUFG-Cu/Sn was similar to that in CG-Cu/Sn one, while the thickness of the η layer in NSUFG-Cu/Sn reaction was about two times thicker than that in CG-Cu/Sn one. This enhancement of the η layer growth in NSUFG-Cu/Sn reaction was due to the large supply of Cu atoms to the reaction layer by the grain boundary diffusion in the NSUFG-Cu. The rate-controlling processes of layer growth were boundary diffusion mechanism in reaction layer at lower temperatures in shorter annealing time, and volume diffusion mechanism at higher temperatures in longer annealing times.
KW - Diffusion
KW - Electroplated tin
KW - Intermetallic compounds
KW - Layer growth
KW - Near surface severe plastic deformation
KW - Near surface ultrafine grains
KW - OFHC-Cu
KW - Reaction
UR - http://www.scopus.com/inward/record.url?scp=84954218797&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84954218797&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.127.115
DO - 10.4028/www.scientific.net/SSP.127.115
M3 - Conference contribution
AN - SCOPUS:84954218797
SN - 9783908451334
T3 - Solid State Phenomena
SP - 115
EP - 120
BT - Designing of Interfacial Structures in Advanced Materials and their Joints
A2 - Naka, Masaaki
PB - Trans Tech Publications Ltd
T2 - International Workshop on Designing of Interfacial Structures in Advanced Materials and their Joints, DIS 2006
Y2 - 18 May 2006 through 20 May 2006
ER -