Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001)

J. P. Sullivan; Toshiyuki Hirano; T. Komeda; H. M. Meyer; B. M. Trafas; G. D. Waddill; J. H. Weaver

doi:10.1063/1.103308

Reaction and stability of metal/silicide interfaces: Ti/MoSi₂ (001)

J. P. Sullivan, Toshiyuki Hirano, T. Komeda, H. M. Meyer, B. M. Trafas, G. D. Waddill, J. H. Weaver

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi₂ (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi₂ (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.

本文言語	English
ページ（範囲）	671-673
ページ数	3
ジャーナル	Applied Physics Letters
巻	56
号	7
DOI	https://doi.org/10.1063/1.103308
出版ステータス	Published - 1990
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.103308

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引用スタイル

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abstract = "Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi2 (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi2 (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.",

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AU - Sullivan, J. P.

AU - Hirano, Toshiyuki

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AU - Waddill, G. D.

AU - Weaver, J. H.

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AB - Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi2 (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi2 (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.

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