Re-entrant spin-glass behaviour in CeAu2Si2

D. X. Li, T. Yamamura, S. Nimori, Y. Shiokawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr2Si2-type compound CeAu2Si2. These data provide clear evidence for the formation of spin glass state in this system at about Tf ∼ 2.2 K much lower than its Néel temperature TN = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu2Si2 is discussed by comparing the present results with those reported for the analogue compounds URh2Ge2 and PrAu2Si2.

本文言語English
ページ(範囲)461-463
ページ数3
ジャーナルJournal of Alloys and Compounds
451
1-2
DOI
出版ステータスPublished - 2008 2 28

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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