The values of the zero-field spin-splitting energy Δ0 in InAlAs/InGaAs/InAlAs heterostructures are investigated using anti-weak-localization analysis. The obtained values for Δ0 are compared with values that were theoretically predicted assuming Rashba spin-orbit coupling (denoted by ΔR). The good agreement between Δ0 and ΔR and their dependence on quantum well asymmetry suggest that our approach provides a useful tool for designing future spintronics devices using Rashba spin-orbit coupling.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 2002 3|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics