Rapid synthesis of yttria-partially-stabilized zirconia films by metal-organic chemical vapor deposition

Rong Tu; Teiichi Kimura; Takashi Goto

doi:10.2320/matertrans.43.2354

Rapid synthesis of yttria-partially-stabilized zirconia films by metal-organic chemical vapor deposition

Rong Tu, Teiichi Kimura, Takashi Goto

金属材料研究所・材料プロセス・評価研究部

研究成果: Article › 査読

37 被引用数 (Scopus)

抄録

Yttria-partially-stabilized zirconia (YPSZ) films were synthesized on Hastelloy-XR as thermal barrier coatings (TBC) at a high deposition rate of 100 μm h^-1 (2.8 × 10^-8 ms^-1) by metal-organic chemical vapor deposition (MOCVD) using Zr(dpm)₄ and Y(dpm)₃ precursors. The deposition rate of 100 μm h^-1 was the highest among the reported values for YPSZ films by CVD. The YPSZ films were columnar morphology and (200) oriented with a tetragonal structure.

本文言語	English
ページ（範囲）	2354-2356
ページ数	3
ジャーナル	Materials Transactions
巻	43
号	9
DOI	https://doi.org/10.2320/matertrans.43.2354
出版ステータス	Published - 2002 9

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.43.2354

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引用スタイル

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abstract = "Yttria-partially-stabilized zirconia (YPSZ) films were synthesized on Hastelloy-XR as thermal barrier coatings (TBC) at a high deposition rate of 100 μm h-1 (2.8 × 10-8 ms-1) by metal-organic chemical vapor deposition (MOCVD) using Zr(dpm)4 and Y(dpm)3 precursors. The deposition rate of 100 μm h-1 was the highest among the reported values for YPSZ films by CVD. The YPSZ films were columnar morphology and (200) oriented with a tetragonal structure.",

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author = "Rong Tu and Teiichi Kimura and Takashi Goto",

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