Raman scattering study of the lattice dynamic of URu2Si2 and sample's preparation

Jonathan Buhot, Marie Aude Méasson, Yann Gallais, Maximilien Cazayous, Alain Sacuto, Gérard Lapertot, Dai Aoki

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We report Raman scattering measurements on URu2Si2 single crystals as a function of temperature down to 2 K. We probe all the Raman active symmetries. Only when the sample is prepared with a surface perpendicular to a-axis, we observe an extrinsic hardening and broadening of the A1g and B1g phonons after polishing, which disappears after annealing. Moreover, a parasitic phase with Si-excess compared to URu2Si2 composition appears on the a-axis surface when annealing is at 1075 °C. No parasitic phase is induced when annealing is done at 950 °C. The temperature dependance of the A1g, and two E g phonons shows a hardening with decreasing temperature. The B1g phonon mode's behavior is more unusual, its energy stays stable down to ∼ 30 K before softens at lower temperature. An electron-phonon coupling is certainly at play here.

本文言語English
ページ(範囲)1427-1430
ページ数4
ジャーナルJournal of the Korean Physical Society
62
10
DOI
出版ステータスPublished - 2013
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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