Radiation imaging with a new scintillator and a CMOS camera

S. Kurosawa, Y. Shoji, Jan Pejchal, Y. Yokota, A. Yoshikawa

研究成果: Article査読

6 被引用数 (Scopus)

抄録

A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga)5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 ± 0.4 μm and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.

本文言語English
論文番号C07015
ジャーナルJournal of Instrumentation
9
7
DOI
出版ステータスPublished - 2014 7月 1

ASJC Scopus subject areas

  • 数理物理学
  • 器械工学

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