Radiation hardness of VA1 with submicron process technology

M. Yokoyama, H. Aihara, M. Hazumi, H. Ishino, J. Kaneko, Y. Li, D. Marlow, S. Mikkelsen, E. Nygård, H. Tajima, J. Talebi, G. Varner, H. Yamamoto

研究成果: Conference article

25 引用 (Scopus)

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We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. Large-scale integrated (LSI) samples are fabricated in 0.8 and 0.35 μm process technologies to improve the radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8-μm technology compared to 1.2-μm technology. Little degradation of noise and gain is observed up to a total dose of 20 Mrd for the VA1 fabricated in the 0.35-μm technology. We find that the radiation hardness improves with a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand the mechanism of radiation damage in the VA1.

元の言語English
ページ(範囲)440-443
ページ数4
ジャーナルIEEE Transactions on Nuclear Science
48
発行部数3 I
DOI
出版物ステータスPublished - 2001 6 1
外部発表Yes
イベント2000 Nuclear Science Symphosium (NSS) - Lyon, France
継続期間: 2000 10 152000 10 20

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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  • これを引用

    Yokoyama, M., Aihara, H., Hazumi, M., Ishino, H., Kaneko, J., Li, Y., Marlow, D., Mikkelsen, S., Nygård, E., Tajima, H., Talebi, J., Varner, G., & Yamamoto, H. (2001). Radiation hardness of VA1 with submicron process technology. IEEE Transactions on Nuclear Science, 48(3 I), 440-443. https://doi.org/10.1109/23.940096