A series of proton-beam irradiations was performed in order to investigate the radiation damage of silicon photodiodes and double-sided silicon strip sensors. Measurements were made for the leakage current, bias resistance, interstrip isolation, annealing and responses to an infrared light pulse and β-rays. Some problems in the production of radiation-hard double-sided strip sensors were observed. However, it has been shown that most of them can be resolved by adequately designing the strip structure, the implantation density and the materials used for various parts of the sensor. It is therefore possible to obtain a double-sided silicon strip sensor which works even after charged-particle irradiation of 20 kGy.
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