Radiation damage in pure and helium-doped α-Al2O3 in the HVEM Quantitative aspects of void and aluminium precipitate formation

G. P. Pells Aere, T. Shikama

研究成果: Article査読

28 被引用数 (Scopus)

抄録

Single crystal α-Al2O3, both pure and helium-doped, has been irradiated with 1 MV electrons in a HVEM at several temperatures in the range 880–1130 K. Voids and aluminium precipitates were found to form after electron doses of ∼ 17 and ∼40 MC m−2, respectively. The number and size distribution of both voids and aluminium precipitates were determined, and the volume fraction of both kinds of defect were found to follow a power law of dose with an exponent of 0·5–0·6. An activation energy for void formation of 0·96 ± 0·1 eV was obtained, and void swelling was found to be only slightly increased by helium doping. The activation energy for aluminium precipitate formation was found to be 1·35 ± 0·15 eV.

本文言語English
ページ(範囲)779-794
ページ数16
ジャーナルPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
48
5
DOI
出版ステータスPublished - 1983 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 材料科学(全般)
  • 凝縮系物理学
  • 物理学および天文学(その他)
  • 金属および合金

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