Quaternary 1T-2MTJ cell circuit for a high-density and a high-throughput nonvolatile bit-serial CAM

Shoun Matsunaga, Takahiro Hanyu

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

A compact quaternary cell circuit using a single MOS transistor and two magnetic tunnel junction devices (1T-2MTJ) is proposed for a high-density nonvolatile bit-serial content-addressable memory (CAM). The use of quaternary CAM-cell structure makes the search-cycle counts half, which achieves a high-speed search operation. Moreover, the power supply of a CAM word circuit is cut off whenever a mismatched cell is detected during search operation, which greatly reduces the static power dissipation. In fact, the average activation ratio of a 128-bit CAM word circuit is about 2.05 percent. The efficiency of the proposed CAM-cell structure is discussed in comparison with a conventional binary CAM-cell structure under a 0.14 um CMOS/MTJ technology.

本文言語English
ホスト出版物のタイトルProceedings - IEEE 42nd International Symposium on Multiple-Valued Logic, ISMVL 2012
ページ98-103
ページ数6
DOI
出版ステータスPublished - 2012 7 30
イベント42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012 - Victoria, BC, Canada
継続期間: 2012 5 142012 5 16

出版物シリーズ

名前Proceedings of The International Symposium on Multiple-Valued Logic
ISSN(印刷版)0195-623X

Other

Other42nd IEEE International Symposium on Multiple-Valued Logic, ISMVL 2012
CountryCanada
CityVictoria, BC
Period12/5/1412/5/16

ASJC Scopus subject areas

  • Computer Science(all)
  • Mathematics(all)

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