Quasi-free-standing monolayer hexagonal boron nitride on Ni

Satoru Suzuki, Yuichi Haruyama, Masahito Niibe, Takashi Tokushima, Akinobu Yamaguchi, Yuichi Utsumi, Atsushi Ito, Ryo Kadowaki, Akane Maruta, Tadashi Abukawa

研究成果: Article査読

抄録

The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.

本文言語English
論文番号016304
ジャーナルMaterials Research Express
6
1
DOI
出版ステータスPublished - 2019 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 生体材料
  • 表面、皮膜および薄膜
  • ポリマーおよびプラスチック
  • 金属および合金

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