Quarter-micron selective-epitaxial-silicon refilled trench (SRT) isolation technology with substrate shield

M. Aoki, H. Takato, S. Samata, M. Numano, A. Yagishita, K. Hieda, Akihiro Nitayama, F. Horiguchi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In order to realize high-density and stress-free field isolation for future ULSIs, the authors propose a selective-epitaxial-silicon refilled trench (SRT) isolation. The SRT isolation structure consists of a thin insulator film on the trench sidewalls, a selective-epitaxial-growth (SEG) silicon layer refilling the trench, and a capping oxide covering the trench openings. By using this isolation, the number of isolation process steps can be reduced to 60% of the number for a conventional process, and the stress induced by the thermal process can be minimal. The authors have succeeded in fabricating a 0.2-μ m isolation structure and have confirmed its excellent characteristics.

本文言語English
ホスト出版物のタイトルInternational Electron Devices Meeting 1991, IEDM 1991
出版社Institute of Electrical and Electronics Engineers Inc.
ページ447-450
ページ数4
ISBN(電子版)0780302435
DOI
出版ステータスPublished - 1991 1 1
イベントInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
継続期間: 1991 12 81991 12 11

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
1991-January
ISSN(印刷版)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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