Quantum transport property in FETs with deterministically implanted single-arsenic ions using single-ion implantation

M. Hori, T. Shinada, F. Guagliardo, G. Ferrari, E. Prati

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We fabricated silicon transistors containing two and six arsenic ions implanted in one dimensional array along the channel by single-ion implantation method. The quantum transport was measured through the D 0 and D - states of the arsenic ions at low temperature. We observed two different quantum transport regimes from the individual donor regime to the intermediate doping regime in which Hubbard bands are formed in agreement with the theoretical models. These results indicate that our deterministic single-ion doping method is more effective and reliable for single-dopant transistor development and pave the way towards single atom electronics for extended CMOS applications [12].

本文言語English
ホスト出版物のタイトル2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOI
出版ステータスPublished - 2012
外部発表はい
イベント2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
継続期間: 2012 6 102012 6 11

出版物シリーズ

名前2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Other

Other2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
CountryUnited States
CityHonolulu, HI
Period12/6/1012/6/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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