TY - GEN
T1 - Quantum transport in deterministically implanted single-donors in Si FETs
AU - Shinada, T.
AU - Hori, M.
AU - Guagliardo, F.
AU - Ferrari, G.
AU - Komatubara, A.
AU - Kumagai, K.
AU - Tanii, T.
AU - Endo, T.
AU - Ono, Y.
AU - Prati, E.
PY - 2011
Y1 - 2011
N2 - Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.
AB - Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D 0 and D - states; Hubbard band formation due to the inter-donor coupling.
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U2 - 10.1109/IEDM.2011.6131644
DO - 10.1109/IEDM.2011.6131644
M3 - Conference contribution
AN - SCOPUS:84857026055
SN - 9781457705052
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 30.4.1-30.4.4
BT - 2011 International Electron Devices Meeting, IEDM 2011
T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011
Y2 - 5 December 2011 through 7 December 2011
ER -