Quantum oscillations in diamond field-effect transistors with a h -BN gate dielectric

Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Shiori Sugiura, Taichi Terashima, Shinya Uji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field-effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to charged impurities near the diamond surface. Here, we fabricate diamond field-effect transistors by using a monocrystalline hexagonal boron nitride as a gate dielectric. The resulting high mobility of charge carriers allows us to observe quantum oscillations in both the longitudinal and Hall resistivities. The oscillations provide important information on the fundamental properties of the charge carriers, such as effective mass, lifetime, and dimensionality. Our results indicate the presence of a high-quality two-dimensional hole gas at the diamond surface and thus pave the way for studies of quantum transport in diamond and the development of low-loss and high-speed devices.

本文言語English
論文番号121601
ジャーナルPhysical Review Materials
3
12
DOI
出版ステータスPublished - 2019 12月 2
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 物理学および天文学(その他)

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