Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

K. Suzuki, S. Miyashita, K. Takashina, Yoshiro Hirayama

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron-hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-νnet discontinuous. Under tilted magnetic fields, these Rxx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron-hole hybridization and the formation of minigaps at LL crossings.

本文言語English
ページ(範囲)232-235
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
20
3-4
DOI
出版ステータスPublished - 2004 1 1
外部発表はい
イベントProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
継続期間: 2003 6 162003 6 20

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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