Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer

Yoshiaki Nakamura, Masakazu Ichikawa, Kentaro Watanabe, Yasuhiro Hatsugai

研究成果: Article査読

40 被引用数 (Scopus)

抄録

A scanning tunneling microscopic study revealed quantum fluctuation of tunneling currents in individual Ge quantum dots (QDs) on SiO2/Si. This was due to the charging energy change in the QDs caused by single-electron transfer from or into the QDs. The observed electron discharging time of approximately milliseconds agreed with the propagation model of the electron wave packets from the QDs to the Si substrates by a tunneling effect rather than by passing through voids in the SiO2 smaller than electron de Broglie wavelength.

本文言語English
論文番号153104
ジャーナルApplied Physics Letters
90
15
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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