Quantitative raman spectrum and reliable thickness identification for atomic layers on insulating substrates

Song Lin Li, Hisao Miyazaki, Haisheng Song, Hiromi Kuramochi, Shu Nakaharai, Kazuhito Tsukagoshi

研究成果: Article査読

257 被引用数 (Scopus)

抄録

We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS 2 flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

本文言語English
ページ(範囲)7381-7388
ページ数8
ジャーナルACS Nano
6
8
DOI
出版ステータスPublished - 2012 8 28
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)
  • 物理学および天文学(全般)

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