Quantitative measurement of dopant concentration profiling by scanning nonlinear dielectric microscopy

Kenya Ishikawa, Koichiro Honda, Yasuo Cho

研究成果: Conference article査読

抄録

Using a scanning nonlinear dielectric microscopy (SNDM), we observed standard Si sample with epitaxial staircase structures, which has known dopant density values calibrated by using secondary ion mass spectroscopy (SIMS). As the result, good quantitative correlation between dopant density values and SNDM signals was obtained without the phenomenon of contrast reversal effect, which is associated with conventional scanning capacitance microscopy (SCM) measurements. Thus, it is expected that SNDM will be an effective method for observing the quantitative measurement of two-dimensional dopant profiling on semiconductor devices.

本文言語English
ページ(範囲)14-19
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
1025
出版ステータスPublished - 2008 12 1
イベントNanoscale Phenomena in Functional Materials by Scanning Probe Microscopy - Boston, MA, United States
継続期間: 2007 11 262007 11 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Quantitative measurement of dopant concentration profiling by scanning nonlinear dielectric microscopy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル