Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via in Situ Confocal Laser Scanning Microscope

Aomi Onuma, Shingo Maruyama, Naoyoshi Komatsu, Takeshi Mitani, Tomohisa Kato, Hajime Okumura, Yuji Matsumoto

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Nanoscale understanding of high-temperature crystal growth dynamics in solution has been a challenge to be tackled by many researchers engaged in investigating solution processes for bulk single crystal growth. Here we propose a new approach to in situ observation at a buried solid/liquid interface in high-temperature solution using a conventional confocal laser scanning microscope. In the solution growth of 4H-SiC with Si-Ni based alloy flux as a model system, we show the ability to quantitatively analyze step motions at the growing SiC crystal on the nanoscale at high temperatures up to 1700 °C in a vacuum. The temperature-dependent step-advance rates for various steps with different step heights demonstrated the advantageous effect of adding Al to the flux on the step-flow growth of SiC: addition of just 4 at% Al effectively suppressed step-bunching. These experiments point to the importance of in situ nanoscale observation in understanding solution growth mechanisms, and hence the potential to accelerate the development of solution growth processes for high-quality bulk single crystals.

本文言語English
ページ(範囲)2844-2851
ページ数8
ジャーナルCrystal Growth and Design
17
5
DOI
出版ステータスPublished - 2017 5月 3

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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