The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2003 4|
ASJC Scopus subject areas
- Physics and Astronomy(all)