Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

Yoshishige Tsuchiya, Masato Endoh, Masatoshi Kurosawa, Raymond T. Tung, Takeo Hattori, Shunri Oda

    研究成果: Article査読

    6 被引用数 (Scopus)

    抄録

    The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼ 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.

    本文言語English
    ページ(範囲)1957-1961
    ページ数5
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    42
    4 B
    DOI
    出版ステータスPublished - 2003 4

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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