Pulse-time-modulated inductively coupled plasma etching for high-performance polysilicon patterning on thin gate oxides

Hiroto Ohtake, Ko Noguchi, Seiji Samukawa, Hidekazu Iida, Arthur Sato, Xue yu Qian

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Charge-free poly-Si MOSFET etching is analyzed based on the effects of pulse-time-modulated inductively coupled plasma with HBr gas. It is shown that the etching and deposition on the substrate surface can be controlled when the HBr plasma is cycled ON and OFF as a rate of a few tens of microseconds. During the pulse-OFF time, the electron temperature decreases.

本文言語English
ページ(範囲)2495-2499
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
18
5
DOI
出版ステータスPublished - 2000 9 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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