Pulse-time modulated ECR plasma etching for highly selective, highly anisotropic and less-charging poly-Si gate patterning

Seiji Samukawa, Kazuo Terada

研究成果: Conference article査読

7 被引用数 (Scopus)

抄録

This paper proposes a new electron cyclotron resonance (ECR) plasma etching for precise gate electrode patterning in future ULSI circuits such as 1Gbit DRAM. In this technology, 10 μ sec pulse-time modulated microwaves are introduced into the plasma chamber. The ECR plasma etching technique achieves highly selective (≥ 100), high-rate (≥ 3000 A/min), highly anisotropic (even at 100% over-etching), notching-free and less-charging submicron poly-Si patterning.

本文言語English
ページ(範囲)27-28
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1994 12月 1
外部発表はい
イベントProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 1994 6月 71994 6月 9

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「Pulse-time modulated ECR plasma etching for highly selective, highly anisotropic and less-charging poly-Si gate patterning」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル