Pulse-time-modulated ECR plasma discharge for highly selective, highly anisotropic and charge-free etching

Seiji Samukawa, Hiroto Ohtake, Tetsu Mieno

研究成果: Chapter

抄録

Highly selective, highly anisotropic, notch-free, and charge-build-up damage-free silicon etching is performed by using Electron Cyclotron Resonance (ECR) Cl2 plasma modulated at a pulse timing of a few tens of microseconds. A large quantity of negative ions are produced in the afterglow of the pulse-time-modulated plasma. The decay times of electron density, electron temperature, and sheath potential are considerably reduced, which is attributable to negative-ion generation. Furthermore, the pulse-time-modulated plasma reduces the time averaged sheath potential. As a result of these effects, charged particles in the sheath are strongly modified from the continuous discharge, and they should improve the selective etching in the pulsed ECR plasma and eliminates charge accumulation on the substrate.

本文言語English
ホスト出版物のタイトルNEC Research & Development
出版社Nippon Electric Co
ページ179-190
ページ数12
37
2
出版ステータスPublished - 1996 4月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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