Pseudo-binary alloying system of ZnO-AgGaO2 reducing the energy band gap of zinc oxide

I. Suzuki, H. Nagatani, Y. Arima, M. Kita, T. Omata

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Pseudo-binary oxide semiconductor alloy films of (1-x)ZnO-x(AgGaO 2)1/2 were fabricated using a conventional rf-magnetron sputtering. The wurtzite-type single phases were obtained in the wide composition range of x ≤ 0.33 because the terminal β-AgGaO2 that corresponds to the composition with x = 1 possesses a wurtzite-derived β-NaFeO2 structure. The energy band gap of ZnO decreased with increasing AgGaO2 concentration, falling to 2.55 eV at x = 0.33. This alloy system enables to use ZnO-based semiconductors in optoelectronic devices working in visible region.

本文言語English
論文番号222107
ジャーナルApplied Physics Letters
103
22
DOI
出版ステータスPublished - 2013 11 25

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Pseudo-binary alloying system of ZnO-AgGaO<sub>2</sub> reducing the energy band gap of zinc oxide」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル