The electronic structure of nearly optimally doped novel superconductor LaO1-xFxBiS2(x=0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (EF), which are well reproduced by first-principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near EF shows a squarelike distribution around the Γ(Z) point in addition to electronlike Fermi-surface (FS) sheets around the X(R) point, indicating that FS of LaO0.54F0.46BiS2 is in close proximity to the theoretically predicted topological change.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2014 12 22|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics