Protonic defect induced carrier doping in TTFCOO -NH 4 +: Tunable doping level by solvent

Takeshi Terauchi, Yuka Kobayashi, Hideo Iwai, Akihiro Tanaka

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The origin of carrier doping in TTFCOO -NH 4 + has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO -NH 4 + is tunable over quite a wide range (9-33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pK SH) of solvent, which likely controls inclusion of protonic defect in the salts.

本文言語English
ページ(範囲)531-535
ページ数5
ジャーナルSynthetic Metals
162
5-6
DOI
出版ステータスPublished - 2012 4
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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