Proton Irradiation on AC-coupled Silicon Microstrip Detectors

Y. Unno, N. Ujiie, F. Hinode, T. Kohriki, T. Kondo, H. Iwasaki, S. Terada, T. Ohmoto, M. Yoshikawa, H. Ohyama, T. Handa, Y. Iwata, T. Ohsugi, K. O'Shaughnessy, B. Rowe, A. Webster, M. Wilder, A. Palounek, H. Ziock, T. PalM. Frautschi, D. Coupal, N. Tamura, S. Kobayashi, A. Murakami, R. Takashima, M. Daigo, M. Higuchi

研究成果: Article査読

2 被引用数 (Scopus)


To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cmx3.4 cm and were made out of a 300 üm thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO2 or double layers of SiO2 and Si3N4, in combination with the surface passivation of SiO2 or Si3N4. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7x1013 protons/cm2, promptly stored at 0 °C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, inter-strip and coupling capacitances, and strip-edge micro-discharges was also followed.

ジャーナルIEEE Transactions on Nuclear Science
出版ステータスPublished - 1995 8

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学


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