In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版物ステータス||Published - 2004 4|
ASJC Scopus subject areas
- Physics and Astronomy(all)