Proposal of new nonvolatile memory with magnetic nano-dots

Takeshi Sakaguchi, Youn Gi Hong, Motoki Kobayashi, Masaaki Takata, Hoon Choi, Jeoung Chill Shim, Hiroyuki Kurino, Mitsumasa Koyanagi

研究成果: Article

18 引用 (Scopus)

抜粋

In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.

元の言語English
ページ(範囲)2203-2206
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
発行部数4 B
DOI
出版物ステータスPublished - 2004 4

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • これを引用

    Sakaguchi, T., Hong, Y. G., Kobayashi, M., Takata, M., Choi, H., Shim, J. C., Kurino, H., & Koyanagi, M. (2004). Proposal of new nonvolatile memory with magnetic nano-dots. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(4 B), 2203-2206. https://doi.org/10.1143/JJAP.43.2203