Proposal and demonstration of a new spin-orbit torque induced switching device

S. Fukami, T. Anekawa, C. Zhang, H. Ohno

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Magnetic tunnel junction (MTJ) devices with three-terminal cell structure are promising building blocks for ultralow-power and high-performance memories and integrated circuits due to their high-speed and high-reliability features [1]. The three-terminal devices with spin-orbit torque (SOT) switching were recently proposed and have intensively investigated for a couple of years [2-7]. The SOT devices proposed so far are divided by their structure into two types. Here we propose a new structure of SOT device that combines the advantages of the existing two structures and demonstrate its basic operation.

本文言語English
ホスト出版物のタイトル2015 IEEE International Magnetics Conference, INTERMAG 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973224
DOI
出版ステータスPublished - 2015 7 14
イベント2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
継続期間: 2015 5 112015 5 15

出版物シリーズ

名前2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
国/地域China
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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