Properties of TIC co-deposited with Ar gas

T. Shikama, M. Fukutomi, M. Fujitsuka, M. Okada

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Atoms constituting the first wall will be eroded off and then re-deposited on other portions of the wall through the plasma-wall interaction. The re-deposited film is considered to incorporate with many gaseous atoms and will evaporate and exfoliate easily during the operation thereafter, resulting in a deleterious contamination of fusion plasma. Here, we studied preliminarily the behavior of sputter-deposited TiC films which incorporated with inert Ar gas, at elevated temperatures. The film deposited with lower bias voltage contained fewer Ar atoms but was easy to evaporate and had weak adhesive strength to its substrate. The film deposited with higher bias voltage resisted to the thermal evaporation and had good adhesive strength but contained more Ar atoms. The incorporated Ar atoms formed blisters and caused the film exfoliation.

本文言語English
ページ(範囲)1281-1285
ページ数5
ジャーナルJournal of Nuclear Materials
123
1-3
DOI
出版ステータスPublished - 1984 5 2

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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