TY - JOUR
T1 - Properties of high quality ZnO films deposited by an RF magnetron mode electron cyclotron resonance (ECR) sputtering system
AU - Kadota, Michio
AU - Minakata, Makoto
PY - 1996/12/1
Y1 - 1996/12/1
N2 - The properties of ZnO film deposited by an RF-magnetron-mode ECR sputtering system, which has added magnets to the outside of a cylindrical zinc metal (Zn) target of the RF-mode ECR sputtering system reported previously, are investigated. The ZnO film on the glass substrate deposited by this system was capable of driving a 1.3 GHz fundamental Rayleigh SAW for the first time. These films exhibit almost the same effective electromechanical coupling factors (keff) as the theoretical keff values calculated by finite element method (FEM) using the constants of ZnO single crystal and lower insertion loss in comparison with the films deposited by the DC-mode ECR and the RF-mode ECR. The ZnO film on R-plane sapphire deposited by this system shows a (112̄0) plane epitaxial ZnO film, which is capable of driving a 2.54 GHz Sezawa wave. By measuring a photoluminescence of a thin epitaxial ZnO film with thickness of 1.2 μm, free excitons are observed for the first time.
AB - The properties of ZnO film deposited by an RF-magnetron-mode ECR sputtering system, which has added magnets to the outside of a cylindrical zinc metal (Zn) target of the RF-mode ECR sputtering system reported previously, are investigated. The ZnO film on the glass substrate deposited by this system was capable of driving a 1.3 GHz fundamental Rayleigh SAW for the first time. These films exhibit almost the same effective electromechanical coupling factors (keff) as the theoretical keff values calculated by finite element method (FEM) using the constants of ZnO single crystal and lower insertion loss in comparison with the films deposited by the DC-mode ECR and the RF-mode ECR. The ZnO film on R-plane sapphire deposited by this system shows a (112̄0) plane epitaxial ZnO film, which is capable of driving a 2.54 GHz Sezawa wave. By measuring a photoluminescence of a thin epitaxial ZnO film with thickness of 1.2 μm, free excitons are observed for the first time.
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M3 - Conference article
AN - SCOPUS:0030373280
VL - 1
SP - 303
EP - 308
JO - Proceedings - IEEE Ultrasonics Symposium
JF - Proceedings - IEEE Ultrasonics Symposium
SN - 1051-0117
T2 - Proceedings of the 1996 IEEE Ultrasonics Symposium. Part 2 (of 2)
Y2 - 3 November 1996 through 6 November 1996
ER -